issue 1 - february 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXTP23140BFH 140v sot23 pnp medium power transistor summary v (br)cex > -160v, v (br)ceo > -140v i c(cont) = -2.5a r ce(sat) = 76m typical v ce(sat) < -95mv @ -1a p d = 1.25w description advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. the compact size and rating s of this device make it ideally suited to applications where space is at a premium. features ? higher power dissipation sot23 package high peak current low saturation voltage 160v forward blocking voltage applications dc - dc converters motor drive high side switches ordering information device marking 955 device reel size (inches) tape width quantity per reel ZXTP23140BFHta 7 8mm 3,000 c e b c e pinout - top view b
ZXTP23140BFH issue 1 - february 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5sec. parameter symbol limit unit collector-base voltage v cbo -160 v collector-emitter voltage v (br)cex -160 v collector-emitter voltage v ceo -140 v emitter-base voltage v ebo -7.0 v peak pulse current i cm -5 a continuous collector current (b) i c -2.5 a base current i b -1 a power dissipation @ t a =25c (a) linear derating factor (a) p d 0.73 5.84 w mw/c power dissipation @ t a =25c (b) linear derating factor (b) p d 1.05 8.4 w mw/c power dissipation @ t a =25c (c) linear derating factor (c) p d 1.25 9.6 w mw/c power dissipation @ t a =25c (d) linear derating factor (d) p d 1.81 14.5 w mw/c operating and storage temperature t j :t stg -55 to +150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 171 c/w junction to ambient (b) r ja 119 c/w junction to ambient (c) r ja 100 c/w junction to ambient (d) r ja 69 c/w
ZXTP23140BFH issue 1 - february 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
ZXTP23140BFH issue 1 - february 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage v (br)cbo -160 -180 v i c =-100 a collector-emitter breakdown voltage v (br)cex -160 -180 v i c =-100 a, r be 1k or -0.25v < v be < 1v collector-emitter breakdown voltage v (br)ceo -140 -160 v i c =-10ma (*) notes: (*) measured under pulsed conditions. pulse width=300 s. duty cycle 2%. emitter-base breakdown voltage v (br)ebo -7.0 -8.2 v i e =-100 a collector-emitter cut-off current i cex --100nav ce =-130v; r be 1k or -0.25v < v be < 1v collector-base cut-off current i cbo <1 -20 na v cb =-130v emitter-base cut-off current i ebo <1 -10 na v eb =-6v static forward current transfer ratio h fe 100 200 i c = -10ma, v ce =-5v (*) 100 180 300 i c =-1a, v ce =-5v (*) 40 100 ic=-2.5a, v ce =-5v collector-emitter saturation voltage v ce(sat) -45 -55 mv i c =-100ma, i b =-5ma (*) -80 -95 mv i c =-1a, i b =-100ma (*) -190 -280 mv i c =-2.5a, i b =-250ma (*) base-emitter saturation voltage v be(sat) -0.89 -1.00 v i c =-2.5a, i b =-250ma (*) base-emitter turn-on voltage v be(on) -0.78 -0.90 v i c =-2.5a, v ce =-5v (*) transition frequency f t 130 mhz ic=-100ma, v ce =-10v, f=50mhz output capacitance c obo 30.9 pf v cb =-10v, f=1mhz turn?on time t (on) 132.4 ns v cc =-10v, i c =-2a, i b1 =i b2 =-200ma turn-off time t (off) 345.5 ns
ZXTP23140BFH issue 1 - february 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXTP23140BFH issue 1 - february 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom - - - - - l n h g a c f b m k d 3 leads
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